AOD280A60 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 14A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
на замовлення 2953 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 215.92 грн |
| 10+ | 134.52 грн |
| 100+ | 92.52 грн |
| 500+ | 69.94 грн |
| 1000+ | 64.52 грн |
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Технічний опис AOD280A60 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 14A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V, Power Dissipation (Max): 138W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V.
Інші пропозиції AOD280A60
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AOD280A60 | Виробник : Alpha & Omega Semiconductor |
N Channel Power Transistor |
товару немає в наявності |
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| AOD280A60 | Виробник : Alpha & Omega Semiconductor |
N Channel Power Transistor |
товару немає в наявності |
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AOD280A60 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 14A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V |
товару немає в наявності |
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| AOD280A60 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 56A; 138W; TO252 Case: TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 23.5nC On-state resistance: 0.28Ω Power dissipation: 138W Drain current: 14A Gate-source voltage: ±20V Drain-source voltage: 600V Pulsed drain current: 56A |
товару немає в наявності |