Технічний опис AOD2910E Alpha & Omega Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 26A; 35.5W; TO252; ESD, Mounting: SMD, Version: ESD, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: TO252, Polarisation: unipolar, Gate charge: 8nC, On-state resistance: 23mΩ, Gate-source voltage: ±20V, Drain current: 26A, Power dissipation: 35.5W, Drain-source voltage: 100V.
Інші пропозиції AOD2910E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
AOD2910E | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 37A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Supplier Device Package: TO-252 (DPAK) Part Status: Active |
товару немає в наявності |
|
|
AOD2910E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 26A; 35.5W; TO252; ESD Mounting: SMD Version: ESD Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO252 Polarisation: unipolar Gate charge: 8nC On-state resistance: 23mΩ Gate-source voltage: ±20V Drain current: 26A Power dissipation: 35.5W Drain-source voltage: 100V |
товару немає в наявності |


