AOD4S60 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
на замовлення 2737 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 151.64 грн |
| 10+ | 92.77 грн |
| 100+ | 62.51 грн |
| 500+ | 46.50 грн |
| 1000+ | 42.59 грн |
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Технічний опис AOD4S60 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V, Power Dissipation (Max): 56.8W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V.
Інші пропозиції AOD4S60
| Фото | Назва | Виробник | Інформація |
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AOD4S60 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK |
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AOD4S60 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK |
товару немає в наявності |
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AOD4S60 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V |
товару немає в наявності |