AOD5B65M1 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 10A TO-252
Power - Max: 69 W
Current - Collector Pulsed (Icm): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10 A
Part Status: Active
Gate Charge: 14 nC
Test Condition: 400V, 5A, 60Ohm, 15V
Switching Energy: 80µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 8.5ns/106ns
Supplier Device Package: TO-252 (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.00 грн |
| 10+ | 74.26 грн |
| 100+ | 49.87 грн |
| 500+ | 36.96 грн |
| 1000+ | 33.80 грн |
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Технічний опис AOD5B65M1 Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 10A TO-252, Gate Charge: 14 nC, Test Condition: 400V, 5A, 60Ohm, 15V, Switching Energy: 80µJ (on), 70µJ (off), Td (on/off) @ 25°C: 8.5ns/106ns, Supplier Device Package: TO-252 (DPAK), Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A, Reverse Recovery Time (trr): 195 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Power - Max: 69 W, Current - Collector Pulsed (Icm): 15 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 10 A, Part Status: Active.
Інші пропозиції AOD5B65M1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AOD5B65M1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 10A 69W 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
|
|
AOD5B65M1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 10A TO-252 Gate Charge: 14 nC Test Condition: 400V, 5A, 60Ohm, 15V Switching Energy: 80µJ (on), 70µJ (off) Td (on/off) @ 25°C: 8.5ns/106ns Supplier Device Package: TO-252 (DPAK) Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A Reverse Recovery Time (trr): 195 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Power - Max: 69 W Current - Collector Pulsed (Icm): 15 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 10 A Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
AOD5B65M1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 5A; 28W; TO252; Eoff: 0.07mJ; Eon: 0.08mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 5A Power dissipation: 28W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 15A Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Turn-on time: 21ns Turn-off time: 157ns Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 0.07mJ Turn-on switching energy: 0.08mJ |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| AOD5B65M1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 10A 69W 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 650V 10A 69W 3-Pin(2+Tab) DPAK T/R
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD5B65M1 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 10A TO-252
Gate Charge: 14 nC
Test Condition: 400V, 5A, 60Ohm, 15V
Switching Energy: 80µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 8.5ns/106ns
Supplier Device Package: TO-252 (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 69 W
Current - Collector Pulsed (Icm): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10 A
Part Status: Active
Description: IGBT 650V 10A TO-252
Gate Charge: 14 nC
Test Condition: 400V, 5A, 60Ohm, 15V
Switching Energy: 80µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 8.5ns/106ns
Supplier Device Package: TO-252 (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 69 W
Current - Collector Pulsed (Icm): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10 A
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD5B65M1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 28W; TO252; Eoff: 0.07mJ; Eon: 0.08mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 5A
Power dissipation: 28W
Case: TO252
Gate-emitter voltage: ±30V
Pulsed collector current: 15A
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Turn-on time: 21ns
Turn-off time: 157ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.08mJ
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 28W; TO252; Eoff: 0.07mJ; Eon: 0.08mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 5A
Power dissipation: 28W
Case: TO252
Gate-emitter voltage: ±30V
Pulsed collector current: 15A
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Turn-on time: 21ns
Turn-off time: 157ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.08mJ
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.