Технічний опис AOD66620 Alpha & Omega Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 58A; Idm: 125A; 21W, Type of transistor: N-MOSFET, Technology: AlphaSGT™, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 58A, Pulsed drain current: 125A, Power dissipation: 21W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 8.5mΩ, Mounting: SMD, Gate charge: 16nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції AOD66620
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOD66620 | Виробник : Alpha & Omega Semiconductor |
 N Channel Trench Power MOSFET |
товару немає в наявності |
||
| AOD66620 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 58A; Idm: 125A; 21W Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 58A Pulsed drain current: 125A Power dissipation: 21W Case: TO252 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |