
AOD66920 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 67500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
2500+ | 38.80 грн |
5000+ | 34.81 грн |
7500+ | 34.28 грн |
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Технічний опис AOD66920 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 19.5A/70A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V.
Інші пропозиції AOD66920 за ціною від 38.95 грн до 138.47 грн
Фото | Назва | Виробник | Інформація |
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AOD66920 | Виробник : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
на замовлення 68084 шт: термін постачання 21-31 дні (днів) |
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AOD66920 | Виробник : Alpha & Omega Semiconductor |
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товару немає в наявності |
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AOD66920 | Виробник : Alpha & Omega Semiconductor |
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товару немає в наявності |
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AOD66920 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 70A; Idm: 180A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Power dissipation: 35.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 35nC Kind of channel: enhancement Pulsed drain current: 180A Kind of package: reel; tape Technology: AlphaSGT™ кількість в упаковці: 1 шт |
товару немає в наявності |
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AOD66920 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 70A; Idm: 180A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Power dissipation: 35.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 35nC Kind of channel: enhancement Pulsed drain current: 180A Kind of package: reel; tape Technology: AlphaSGT™ |
товару немає в наявності |