AOD66923 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 30.11 грн |
| 5000+ | 27.61 грн |
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Технічний опис AOD66923 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 16.5A/58A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V.
Інші пропозиції AOD66923 за ціною від 28.91 грн до 72.94 грн
| Фото | Назва | Виробник | Інформація |
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AOD66923 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 16.5A/58A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V |
на замовлення 15856 шт: термін постачання 21-31 дні (днів) |
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AOD66923 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 100V 16.5A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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AOD66923 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 100V 16.5A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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AOD66923 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36.5A; 29W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36.5A Power dissipation: 29W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 12.5nC Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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AOD66923 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36.5A; 29W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36.5A Power dissipation: 29W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 12.5nC Kind of channel: enhanced |
товар відсутній |