AOD6B60M1 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 28W; TO252; Eoff: 0.09mJ; Eon: 0.12mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 28W
Case: TO252
Gate-emitter voltage: ±30V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.09mJ
Turn-on switching energy: 0.12mJ
Turn-on time: 20ns
Turn-off time: 158ns
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.58 грн |
| 22+ | 19.96 грн |
| 25+ | 19.04 грн |
| 250+ | 18.11 грн |
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Технічний опис AOD6B60M1 ALPHA & OMEGA SEMICONDUCTOR
Category: SMD IGBT transistors, Description: Transistor: IGBT; 600V; 6A; 28W; TO252; Eoff: 0.09mJ; Eon: 0.12mJ, Type of transistor: IGBT, Collector-emitter voltage: 600V, Collector current: 6A, Power dissipation: 28W, Case: TO252, Gate-emitter voltage: ±30V, Pulsed collector current: 18A, Mounting: SMD, Gate charge: 14nC, Kind of package: reel; tape, Collector-emitter saturation voltage: 1.7V, Turn-off switching energy: 0.09mJ, Turn-on switching energy: 0.12mJ, Turn-on time: 20ns, Turn-off time: 158ns.