AOE6930 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 68.09 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
3000 шт
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Технічний опис AOE6930 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 24W, 75W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA, Supplier Device Package: 8-DFN (5x6).
Інші пропозиції AOE6930 за ціною від 74.12 грн до 224.45 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AOE6930 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 22/85A; 9.6/30W; DFN5x6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 22/85A Power dissipation: 9.6/30W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 4.3/0.83mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement Semiconductor structure: asymmetric |
на замовлення 64 шт: термін постачання 14-30 дні (днів) |
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AOE6930 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 75W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
на замовлення 4841 шт: термін постачання 21-31 дні (днів) |
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| AOE6930 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 22/85A; 9.6/30W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22/85A
Power dissipation: 9.6/30W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 4.3/0.83mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 22/85A; 9.6/30W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22/85A
Power dissipation: 9.6/30W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 4.3/0.83mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Semiconductor structure: asymmetric
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.98 грн |
| 5+ | 94.08 грн |
| 10+ | 82.53 грн |
| 31+ | 80.88 грн |
| AOE6930 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 4841 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.45 грн |
| 10+ | 140.45 грн |
| 50+ | 107.88 грн |
| 100+ | 91.40 грн |
| 500+ | 74.12 грн |