AOI1R4A70 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.4A; 48W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.4A
Power dissipation: 48W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 8nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.4A; 48W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.4A
Power dissipation: 48W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 8nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис AOI1R4A70 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 700V 3.8A TO251A, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: TO-251A, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V.
Інші пропозиції AOI1R4A70
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AOI1R4A70 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 3.8A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V |
товар відсутній |
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AOI1R4A70 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.4A; 48W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.4A Power dissipation: 48W Case: TO251A Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 8nC Kind of channel: enhanced |
товар відсутній |