Технічний опис AOI409 Alpha & Omega Semiconductor
Description: MOSFET P-CH 60V 26A TO251A, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-251A, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V.
Інші пропозиції AOI409
| Фото | Назва | Виробник | Інформація |
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AOI409 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET P-CH 60V 26A 3-Pin(3+Tab) TO-251A |
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AOI409 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 22.2nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AOI409 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 60V 26A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V |
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AOI409 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 22.2nC Kind of channel: enhanced |
товар відсутній |