AOI4286 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 4A/14A TO251A
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.71 грн |
| 70+ | 33.65 грн |
| 140+ | 24.42 грн |
| 560+ | 19.15 грн |
| 1050+ | 16.30 грн |
| 2030+ | 14.52 грн |
| 5040+ | 13.53 грн |
| 10010+ | 12.53 грн |
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Технічний опис AOI4286 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 4A/14A TO251A, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-251A, Vgs(th) (Max) @ Id: 2.9V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.
Інші пропозиції AOI4286 за ціною від 14.04 грн до 55.48 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AOI4286 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 2.8nC Kind of channel: enhancement |
на замовлення 3444 шт: термін постачання 14-30 дні (днів) |
|
| AOI4286 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of channel: enhancement
на замовлення 3444 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 55.48 грн |
| 23+ | 18.61 грн |
| 70+ | 16.70 грн |
| 140+ | 15.21 грн |
| 490+ | 14.04 грн |