AOI444 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 4A/12A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
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Технічний опис AOI444 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 4A/12A TO251A, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V, Power Dissipation (Max): 2.1W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-251A, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V.
Інші пропозиції AOI444
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AOI444 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 10W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Power dissipation: 10W Case: TO251A Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 3.8nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. |
| AOI444 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 10W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 10W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 3.8nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 10W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 10W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 3.8nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.