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AOK40B120N1 Alpha & Omega Semiconductor

Виробник: Alpha & Omega Semiconductor
Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode

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Технічний опис AOK40B120N1 Alpha & Omega Semiconductor

Description: IGBT 1200V 40A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 300 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 57ns/146ns, Switching Energy: 3.4mJ (on), 1.4mJ (off), Test Condition: 600V, 40A, 7.5Ohm, 15V, Gate Charge: 100 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 600 W.

Інші пропозиції AOK40B120N1

Назва	Виробник	Інформація	Доступність	Ціна
AOK40B120N1	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Type of transistor: IGBT Power dissipation: 300W Case: TO247 Mounting: THT Kind of package: tube Collector current: 40A Gate-emitter voltage: ±30V Gate charge: 0.1µC Collector-emitter voltage: 1.2kV Pulsed collector current: 160A кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
AOK40B120N1	Виробник : Alpha & Omega Semiconductor Inc.	Description: IGBT 1200V 40A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 300 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 57ns/146ns Switching Energy: 3.4mJ (on), 1.4mJ (off) Test Condition: 600V, 40A, 7.5Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 600 W	товару немає в наявності	В кошику од. на суму грн.
AOK40B120N1	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Type of transistor: IGBT Power dissipation: 300W Case: TO247 Mounting: THT Kind of package: tube Collector current: 40A Gate-emitter voltage: ±30V Gate charge: 0.1µC Collector-emitter voltage: 1.2kV Pulsed collector current: 160A	товару немає в наявності	В кошику од. на суму грн.