Технічний опис AOK40B65H2AL Alpha & Omega Semiconductor
Description: IGBT 650V 40A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 315 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 30ns/117ns, Switching Energy: 1.17mJ (on), 540µJ (off), Test Condition: 600V, 40A, 7.5Ohm, 15V, Gate Charge: 61 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Інші пропозиції AOK40B65H2AL
| Фото | Назва | Виробник | Інформація |
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AOK40B65H2AL | Виробник : Alpha & Omega Semiconductor |
 Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube |
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AOK40B65H2AL | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 61nC Kind of package: tube Turn-on time: 64ns Turn-off time: 152ns Collector-emitter saturation voltage: 2.05V Turn-off switching energy: 0.54mJ Turn-on switching energy: 1.17mJ кількість в упаковці: 1 шт |
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AOK40B65H2AL | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 40A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 315 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 1.17mJ (on), 540µJ (off) Test Condition: 600V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
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AOK40B65H2AL | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 61nC Kind of package: tube Turn-on time: 64ns Turn-off time: 152ns Collector-emitter saturation voltage: 2.05V Turn-off switching energy: 0.54mJ Turn-on switching energy: 1.17mJ |
товар відсутній |