Технічний опис AOK40N30L Alpha & Omega Semiconductor
Description: MOSFET N-CH 300V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: TO-247, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V.
Інші пропозиції AOK40N30L
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AOK40N30L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247 Mounting: THT Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 85mΩ Drain current: 25A Drain-source voltage: 300V Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247 кількість в упаковці: 240 шт |
товар відсутній |
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AOK40N30L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 300V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
товар відсутній |
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AOK40N30L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247 Mounting: THT Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 85mΩ Drain current: 25A Drain-source voltage: 300V Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247 |
товар відсутній |