Технічний опис AOL1702 AOS
Description: MOSFET N-CH 30V 14A/70A ULTRASO8, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: UltraSO-8™, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 58W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR), Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc), FET Type: N-Channel.
Інші пропозиції AOL1702
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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AOL1702 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 30V 14A/70A ULTRASO8Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: UltraSO-8™ Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 2.1W (Ta), 58W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc) FET Type: N-Channel |
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В кошику од. на суму грн. |
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AOL1702 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 14A/70A ULTRASO8 Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: UltraSO-8™ Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 2.1W (Ta), 58W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| AOL1702 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14A/70A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 58W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 30V 14A/70A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 58W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
FET Type: N-Channel
товару немає в наявності
В кошику
од. на суму грн.
| AOL1702 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14A/70A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 58W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 14A/70A ULTRASO8
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 58W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.