AOM015V75X2Q Alpha & Omega Semiconductor Inc.

Description: 750V SILICON CARBIDE MOSFET, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +15V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, Grade: Automotive, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.5V @ 24mA, Power Dissipation (Max): 312W (Tj), Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.