AOM020V120X2 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1898.67 грн |
| 10+ | 1327.55 грн |
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Технічний опис AOM020V120X2 Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 27mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +18V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V.
Інші пропозиції AOM020V120X2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOM020V120X2 | Виробник : Alpha & Omega Semiconductor |
AOM020V120X2 |
товару немає в наявності |
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| AOM020V120X2 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 348W Drain-source voltage: 1.2kV Drain current: 63A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 348W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 166nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...15V Pulsed drain current: 200A Mounting: THT Case: TO247-4 кількість в упаковці: 1 шт |
товару немає в наявності |
||
| AOM020V120X2 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 348W Drain-source voltage: 1.2kV Drain current: 63A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 348W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 166nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...15V Pulsed drain current: 200A Mounting: THT Case: TO247-4 |
товару немає в наявності |