Технічний опис AON1606 Alpha & Omega Semiconductor
Description: MOSFET N-CH 20V 700MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 3-DFN (1.0 x 0.60), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V.
Інші пропозиції AON1606
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AON1606 | Виробник : Alpha & Omega Semiconductor |
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товару немає в наявності |
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AON1606 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.55A; 0.55W; DFN3; ESD Case: DFN3 Mounting: SMD Drain-source voltage: 20V Drain current: 0.55A On-state resistance: 275mΩ Type of transistor: N-MOSFET Power dissipation: 0.55W Polarisation: unipolar Version: ESD Gate charge: 0.85nC Kind of channel: enhancement Gate-source voltage: ±8V кількість в упаковці: 5 шт |
товару немає в наявності |
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AON1606 | Виробник : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 3-DFN (1.0 x 0.60) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V |
товару немає в наявності |
|
AON1606 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.55A; 0.55W; DFN3; ESD Case: DFN3 Mounting: SMD Drain-source voltage: 20V Drain current: 0.55A On-state resistance: 275mΩ Type of transistor: N-MOSFET Power dissipation: 0.55W Polarisation: unipolar Version: ESD Gate charge: 0.85nC Kind of channel: enhancement Gate-source voltage: ±8V |
товару немає в наявності |