AON1634 ALPHA & OMEGA SEMICONDUCTOR


AON1634.pdf Виробник: ALPHA & OMEGA SEMICONDUCTOR
AON1634 SMD N channel transistors
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис AON1634 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 30V 4A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-DFN (1.6x1.6), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V.

Інші пропозиції AON1634

Фото Назва Виробник Інформація Доступність
Ціна
AON1634 Виробник : Alpha & Omega Semiconductor aon1634.pdf Trans MOSFET N-CH 30V 4A 6-Pin DFN EP
товару немає в наявності
В кошику  од. на суму  грн.
AON1634 AON1634 Виробник : Alpha & Omega Semiconductor Inc. AON1634.pdf Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
AON1634 AON1634 Виробник : Alpha & Omega Semiconductor Inc. AON1634.pdf Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.