AON1634 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 1.15W; DFN1,6x1,6A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 1.15W
Case: DFN1,6x1,6A
Gate-source voltage: ±12V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
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Технічний опис AON1634 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 30V 4A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-DFN (1.6x1.6), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V.
Інші пропозиції AON1634
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AON1634 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 4A 6-Pin DFN EP |
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AON1634 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 4A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-DFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V |
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AON1634 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 4A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-DFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V |
товар відсутній |
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| AON1634 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 1.15W; DFN1,6x1,6A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Power dissipation: 1.15W Case: DFN1,6x1,6A Gate-source voltage: ±12V On-state resistance: 54mΩ Mounting: SMD Gate charge: 5.7nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |