Технічний опис AON2405 Alpha & Omega Semiconductor
Description: MOSFET P-CH 20V 8A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V, Power Dissipation (Max): 2.8W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 6-DFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V.
Інші пропозиції AON2405
| Фото | Назва | Виробник | Інформація |
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AON2405 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET P-CH 20V 8A 6-Pin DFN-B EP T/R |
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| AON2405 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1.8W; DFN6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1.8W Case: DFN6 Gate-source voltage: ±8V Mounting: SMD Gate charge: 13nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AON2405 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V |
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AON2405 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 8A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V |
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| AON2405 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1.8W; DFN6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1.8W Case: DFN6 Gate-source voltage: ±8V Mounting: SMD Gate charge: 13nC Kind of channel: enhanced |
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