AON2409 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
на замовлення 676 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 42.65 грн |
| 10+ | 34.91 грн |
| 100+ | 24.23 грн |
| 500+ | 17.76 грн |
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Технічний опис AON2409 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V, Power Dissipation (Max): 2.8W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 6-DFN (2x2), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V.
Інші пропозиції AON2409
| Фото | Назва | Виробник | Інформація |
Доступність |
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AON2409 Код товару: 190583 |
Різні комплектуючі > Різні комплектуючі 1 |
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| AON2409 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 8A 6-Pin DFN-B EP T/R |
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AON2409 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 8A 6-Pin DFN-B EP T/R |
товар відсутній |
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AON2409 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 1.8W; DFN6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.3A Power dissipation: 1.8W Case: DFN6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhanced кількість в упаковці: 3000 шт |
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AON2409 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V |
товар відсутній |
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AON2409 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 1.8W; DFN6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.3A Power dissipation: 1.8W Case: DFN6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhanced |
товар відсутній |