AON2803

AON2803 Alpha & Omega Semiconductor


aon2803.pdf Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 3.8A 6-Pin DFN EP T/R
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Технічний опис AON2803 Alpha & Omega Semiconductor

Description: MOSFET 2P-CH 20V 3.8A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V, Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-DFN (2x2).

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AON2803 Виробник : ALPHA & OMEGA SEMICONDUCTOR AON2803-DTE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; 950mW; DFN6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 0.95W
Case: DFN6
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 8.5nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
AON2803 AON2803 Виробник : Alpha & Omega Semiconductor Inc. AON2803.pdf Description: MOSFET 2P-CH 20V 3.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
товар відсутній
AON2803 Виробник : ALPHA & OMEGA SEMICONDUCTOR AON2803-DTE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; 950mW; DFN6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 0.95W
Case: DFN6
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 8.5nC
Kind of channel: enhanced
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