Технічний опис AON2812 Alpha & Omega Semiconductor
Description: MOSFET 2N-CH 30V 4.5A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, Rds On (Max) @ Id, Vgs: 37mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 6-DFN (2x2).
Інші пропозиції AON2812
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AON2812 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 30V 4.5A 6-Pin DFN-A EP T/R |
товар відсутній |
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AON2812 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 4.5A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Rds On (Max) @ Id, Vgs: 37mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-DFN (2x2) |
товар відсутній |