AON3402 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; 3W; DFN8
Case: DFN8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 3W
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 9.6A
On-state resistance: 13mΩ
Gate charge: 17.9nC
на замовлення 2767 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 18.38 грн |
| 25+ | 15.33 грн |
| 56+ | 13.54 грн |
| 153+ | 12.8 грн |
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Технічний опис AON3402 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 20V 12.6A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 4.5V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-DFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 10 V.
Інші пропозиції AON3402 за ціною від 15.32 грн до 22.05 грн
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AON3402 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; 3W; DFN8 Case: DFN8 Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Power dissipation: 3W Gate-source voltage: ±12V Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 9.6A On-state resistance: 13mΩ Gate charge: 17.9nC |
на замовлення 2767 шт: термін постачання 7-14 дні (днів) |
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AON3402 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 12.6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 4.5V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 10 V |
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