AON3414 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.77 грн |
| 6000+ | 7.69 грн |
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Технічний опис AON3414 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN (3x3), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції AON3414 за ціною від 8.97 грн до 38.83 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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AON3414 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3; ESD Power dissipation: 2W Case: DFN3x3 Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15nC On-state resistance: 17mΩ Drain current: 8A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 2982 шт: термін постачання 14-30 дні (днів) |
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AON3414 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10.5A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 8699 шт: термін постачання 21-31 дні (днів) |
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| AON3414 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3; ESD
Power dissipation: 2W
Case: DFN3x3
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 17mΩ
Drain current: 8A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3; ESD
Power dissipation: 2W
Case: DFN3x3
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 17mΩ
Drain current: 8A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 2982 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.79 грн |
| 35+ | 11.97 грн |
| 100+ | 11.05 грн |
| 250+ | 10.55 грн |
| 500+ | 9.47 грн |
| 1000+ | 8.97 грн |
| AON3414 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 8699 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.83 грн |
| 13+ | 23.11 грн |
| 100+ | 14.73 грн |
| 500+ | 10.42 грн |
| 1000+ | 9.32 грн |