Технічний опис AON3814 Alpha & Omega Semiconductor
Description: MOSFET 2N-CH 20V 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 20V, Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V, Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 8-DFN (3x3).
Інші пропозиції AON3814
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AON3814 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 5.3A; 1.6W; DFN8 Type of transistor: N-MOSFET x2 Case: DFN8 Mounting: SMD Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced Drain-source voltage: 20V Gate-source voltage: ±12V Semiconductor structure: common drain Gate charge: 11nC Drain current: 5.3A кількість в упаковці: 1 шт |
товар відсутній |
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AON3814 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN (3x3) |
товар відсутній |
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AON3814 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.3A; 1.6W; DFN8 Type of transistor: N-MOSFET x2 Case: DFN8 Mounting: SMD Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced Drain-source voltage: 20V Gate-source voltage: ±12V Semiconductor structure: common drain Gate charge: 11nC Drain current: 5.3A |
товар відсутній |