AON3818 Alpha & Omega Semiconductor


aon3818.pdf Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 24V 8A 8-Pin DFN T/R
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис AON3818 Alpha & Omega Semiconductor

Description: MOSFET 2N-CH 24V 8A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W, Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V, Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-DFN (3x3).

Інші пропозиції AON3818

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
AON3818 AON3818 Виробник : ALPHA & OMEGA SEMICONDUCTOR AON3818.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; 1.7W; DFN8
Mounting: SMD
Case: DFN8
Power dissipation: 1.7W
Gate-source voltage: ±12V
Type of transistor: N-MOSFET x2
Drain-source voltage: 24V
Drain current: 6A
Gate charge: 9.5nC
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
AON3818 AON3818 Виробник : Alpha & Omega Semiconductor Inc. AON3818.pdf Description: MOSFET 2N-CH 24V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN (3x3)
товар відсутній
AON3818 AON3818 Виробник : ALPHA & OMEGA SEMICONDUCTOR AON3818.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; 1.7W; DFN8
Mounting: SMD
Case: DFN8
Power dissipation: 1.7W
Gate-source voltage: ±12V
Type of transistor: N-MOSFET x2
Drain-source voltage: 24V
Drain current: 6A
Gate charge: 9.5nC
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній