Технічний опис AON4407 Alpha & Omega Semiconductor
Description: MOSFET P-CH 12V 9A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 850mV @ 250µA, Supplier Device Package: 8-DFN (3x2), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V.
Інші пропозиції AON4407
| Фото | Назва | Виробник | Інформація |
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AON4407 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -7A; 1.6W; DFN8 Mounting: SMD Drain-source voltage: -12V Drain current: -7A Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±8V Case: DFN8 кількість в упаковці: 3000 шт |
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AON4407 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 9A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V |
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AON4407 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 9A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V |
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AON4407 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7A; 1.6W; DFN8 Mounting: SMD Drain-source voltage: -12V Drain current: -7A Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±8V Case: DFN8 |
товар відсутній |