AON6152A Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 45V 58A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 22.5 V
| Кількість | Ціна |
|---|---|
| 2+ | 254.26 грн |
| 10+ | 159.86 грн |
| 100+ | 111.35 грн |
| 500+ | 85.02 грн |
| 1000+ | 78.77 грн |
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Технічний опис AON6152A Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 45V 58A/100A 8DFN, Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR), Power Dissipation (Max): 7.3W (Ta), 208W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 22.5 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.3V @ 250µA.
Інші пропозиції AON6152A
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AON6152A | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 45V 58A/100A 8DFN Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) Power Dissipation (Max): 7.3W (Ta), 208W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 22.5 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.3V @ 250µA |
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