AON6162 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 60V 100A 8DFN
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Power Dissipation (Max): 215W (Tc)
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Технічний опис AON6162 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 60V 100A 8DFN, Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Power Dissipation (Max): 215W (Tc).
Інші пропозиції AON6162
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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AON6162 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 86W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 86W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 70nC |
товару немає в наявності |