AON6276 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 80V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 40 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 82.57 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
3000 шт
Відгуки про товар
Написати відгук
Технічний опис AON6276 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 80V 100A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V, Power Dissipation (Max): 215W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 40 V.
Інші пропозиції AON6276 за ціною від 67.67 грн до 264.56 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
AON6276 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 86W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 86W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhancement |
на замовлення 3890 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
|
AON6276 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 80V 100A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 40 V |
на замовлення 17649 шт: термін постачання 21-31 дні (днів) |
|
| AON6276 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 86W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 86W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 86W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 86W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
на замовлення 3890 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.54 грн |
| 5+ | 96.56 грн |
| 10+ | 85.83 грн |
| 14+ | 71.80 грн |
| 37+ | 67.67 грн |
| AON6276 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 80V 100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 40 V
Description: MOSFET N-CHANNEL 80V 100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 40 V
на замовлення 17649 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 264.56 грн |
| 10+ | 166.67 грн |
| 50+ | 128.76 грн |
| 100+ | 109.37 грн |
| 500+ | 89.70 грн |