AON6294 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 17A/52A 8DFN
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-DFN (5x6)
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Технічний опис AON6294 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 17A/52A 8DFN, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 6.2W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Not For New Designs, Supplier Device Package: 8-DFN (5x6).
Інші пропозиції AON6294 за ціною від 36.40 грн до 169.31 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AON6294 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 33A; 57W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 33A Power dissipation: 57W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhancement |
на замовлення 2029 шт: термін постачання 14-30 дні (днів) |
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AON6294 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 17A/52A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Not For New Designs Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 6.2W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 106645 шт: термін постачання 21-31 дні (днів) |
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| AON6294 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 57W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 57W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 57W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 57W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
на замовлення 2029 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 58.17 грн |
| 9+ | 48.20 грн |
| 25+ | 42.38 грн |
| 100+ | 38.72 грн |
| 500+ | 36.40 грн |
| AON6294 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 17A/52A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 17A/52A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 106645 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 169.31 грн |
| 10+ | 104.55 грн |
| 100+ | 71.31 грн |
| 500+ | 53.55 грн |
| 1000+ | 49.25 грн |


