AON6452

AON6452 Alpha & Omega Semiconductor


aon6452.pdf Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 26A 8-Pin DFN EP T/R
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Технічний опис AON6452 Alpha & Omega Semiconductor

Description: MOSFET N-CH 100V 6.5A/26A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 26A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V, Power Dissipation (Max): 2W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V.

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AON6452 AON6452 Виробник : Alpha & Omega Semiconductor aon6452.pdf Trans MOSFET N-CH 100V 26A 8-Pin DFN EP T/R
товар відсутній
AON6452 AON6452 Виробник : ALPHA & OMEGA SEMICONDUCTOR AON6452.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 14W; DFN5x6
On-state resistance: 43mΩ
Type of transistor: N-MOSFET
Power dissipation: 14W
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: DFN5x6
Drain-source voltage: 100V
Drain current: 17A
кількість в упаковці: 1 шт
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AON6452 AON6452 Виробник : Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 100V 6.5A/26A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
товар відсутній
AON6452 AON6452 Виробник : Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 100V 6.5A/26A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
товар відсутній
AON6452 AON6452 Виробник : ALPHA & OMEGA SEMICONDUCTOR AON6452.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 14W; DFN5x6
On-state resistance: 43mΩ
Type of transistor: N-MOSFET
Power dissipation: 14W
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: DFN5x6
Drain-source voltage: 100V
Drain current: 17A
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