Технічний опис AON6516 Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 27A/32A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 6W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V.
Інші пропозиції AON6516
| Фото | Назва | Виробник | Інформація |
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AON6516 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 30V 32A 8-Pin DFN EP T/R |
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AON6516 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 10W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Power dissipation: 10W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AON6516 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 27A/32A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 6W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V |
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AON6516 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 27A/32A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 6W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V |
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AON6516 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 10W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Power dissipation: 10W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhanced |
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