Технічний опис AON6850 Alpha & Omega Semiconductor
Description: MOSFET 2N-CH 100V 5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 50V, Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active.
Інші пропозиції AON6850
| Фото | Назва | Виробник | Інформація |
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AON6850 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 100V 28A 8-Pin DFN EP |
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AON6850 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 18A; 22W; DFN5x6 EP2 Drain-source voltage: 100V Drain current: 18A On-state resistance: 35mΩ Type of transistor: N-MOSFET x2 Power dissipation: 22W Polarisation: unipolar Gate charge: 24nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: DFN5x6 EP2 кількість в упаковці: 3000 шт |
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AON6850 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 100V 5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 50V Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active |
товар відсутній |
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AON6850 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 18A; 22W; DFN5x6 EP2 Drain-source voltage: 100V Drain current: 18A On-state resistance: 35mΩ Type of transistor: N-MOSFET x2 Power dissipation: 22W Polarisation: unipolar Gate charge: 24nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: DFN5x6 EP2 |
товар відсутній |