Технічний опис AON6912A Alpha & Omega Semiconductor
Description: MOSFET 2N-CH 30V 10A/13.8A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, 2.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A, 13.8A, Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V, Rds On (Max) @ Id, Vgs: 13.7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active.
Інші пропозиції AON6912A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
AON6912A | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 30V 34A/52A 8-Pin DFN-B EP |
товару немає в наявності |
|
| AON6912A | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
AON6912A Multi channel transistors |
товару немає в наявності |
||
 |
AON6912A | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 10A/13.8A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W, 2.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A, 13.8A Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active |
товару немає в наявності |