Продукція > ALPHA & OMEGA SEMICONDUCTOR > AON6980

AON6980 Alpha & Omega Semiconductor

Name: AON6980
Brand: ALPHA & OMEGA SEMICONDUCTOR
SKU: 459515460-1
Price: 296.39 UAH
Availability: BackOrder

Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 28A/36A 8-Pin DFN-B EP T/R

товару немає в наявності

В кошику од. на суму грн.

Відгуки про товар

Написати відгук

Технічний опис AON6980 Alpha & Omega Semiconductor

Description: MOSFET 2N-CH 30V 18A/27A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.5W, 4.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18A, 27A, Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V, Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6).

Інші пропозиції AON6980

Назва	Виробник	Інформація	Доступність	Ціна
AON6980	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 22/28A; 9.4/13W; DFN5x6B Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 22/28A Power dissipation: 9.4/13W Case: DFN5x6B Gate-source voltage: ±20V On-state resistance: 6.8/3.8mΩ Mounting: SMD Gate charge: 6.4/21nC Kind of channel: enhancement Semiconductor structure: asymmetric кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
AON6980	Виробник : Alpha & Omega Semiconductor Inc.	Description: MOSFET 2N-CH 30V 18A/27A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W, 4.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A, 27A Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6)	товару немає в наявності	В кошику од. на суму грн.
AON6980	Виробник : Alpha & Omega Semiconductor Inc.	Description: MOSFET 2N-CH 30V 18A/27A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W, 4.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A, 27A Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6)	товару немає в наявності	В кошику од. на суму грн.
AON6980	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 22/28A; 9.4/13W; DFN5x6B Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 22/28A Power dissipation: 9.4/13W Case: DFN5x6B Gate-source voltage: ±20V On-state resistance: 6.8/3.8mΩ Mounting: SMD Gate charge: 6.4/21nC Kind of channel: enhancement Semiconductor structure: asymmetric	товару немає в наявності	В кошику од. на суму грн.