AON7264E ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 11W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 11W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 9+ | 55.89 грн |
| 20+ | 21.60 грн |
| 22+ | 19.09 грн |
| 100+ | 17.16 грн |
| 500+ | 16.24 грн |
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Технічний опис AON7264E ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CHANNEL 60V 28A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V, Power Dissipation (Max): 27.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V.
Інші пропозиції AON7264E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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AON7264E | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 28A 8-Pin DFN-A EP T/R |
товару немає в наявності |
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AON7264E | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 60V 28A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V Power Dissipation (Max): 27.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
товару немає в наявності |