AON7452 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 2.5A/5.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 4.7V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
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Технічний опис AON7452 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 2.5A/5.5A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Obsolete, Supplier Device Package: 8-DFN-EP (3x3), Vgs(th) (Max) @ Id: 4.7V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 17W (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10.
Інші пропозиції AON7452
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AON7452 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 2.5A/5.5A 8DFN Vgs(th) (Max) @ Id: 4.7V @ 250µA Power Dissipation (Max): 3.1W (Ta), 17W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Obsolete Supplier Device Package: 8-DFN-EP (3x3) Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 |
товару немає в наявності |