AON7458 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 250V 1.5A/5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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Технічний опис AON7458 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 250V 1.5A/5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 5A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 1.5A, 10V, Power Dissipation (Max): 3.1W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Інші пропозиції AON7458
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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AON7458 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 3.2A; 13W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 3.2A Power dissipation: 13W Case: DFN8 Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: SMD Gate charge: 6nC Kind of channel: enhancement |
товару немає в наявності |