AON7508 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 26A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 22.15 грн |
| 10000+ | 19.86 грн |
| 15000+ | 19.11 грн |
| 25000+ | 17.15 грн |
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Технічний опис AON7508 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 26A/32A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V.
Інші пропозиції AON7508 за ціною від 22.26 грн до 91.24 грн
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AON7508 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 26A/32A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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| AON7508 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 26A/32A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
Description: MOSFET N-CH 30V 26A/32A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.24 грн |
| 10+ | 55.54 грн |
| 100+ | 36.65 грн |
| 500+ | 26.78 грн |
| 1000+ | 24.32 грн |
| 2000+ | 22.26 грн |