Технічний опис AON7566 Alpha & Omega Semiconductor
Description: MOSFET N-CHANNEL 30V 34A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 15 V.
Інші пропозиції AON7566
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AON7566 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 34A; 12W; DFN8; 3x3mm; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 34A Power dissipation: 12W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 57nC Kind of channel: enhancement Dimensions: 3x3mm Version: ESD кількість в упаковці: 1 шт |
товару немає в наявності |
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AON7566 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 30V 34A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 15 V |
товару немає в наявності |
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AON7566 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 12W; DFN8; 3x3mm; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 34A Power dissipation: 12W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 57nC Kind of channel: enhancement Dimensions: 3x3mm Version: ESD |
товару немає в наявності |