AON7611 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 62.87 грн |
| 10+ | 37.78 грн |
| 100+ | 24.50 грн |
| 500+ | 17.61 грн |
| 1000+ | 15.88 грн |
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Технічний опис AON7611 Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A, Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active.
Інші пропозиції AON7611
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AON7611 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N/P-CH 30V 9A/18.5A 8-Pin DFN-A EP T/R |
товару немає в наявності |
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AON7611 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N/P-CH 30V 9A/18.5A 8-Pin DFN-A EP T/R |
товару немає в наявності |
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AON7611 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.5/-11.5A Power dissipation: 2.8/8.3W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 38/50mΩ Mounting: SMD Gate charge: 4.6/2nC Kind of channel: enhancement Semiconductor structure: common drain Kind of transistor: complementary pair кількість в упаковці: 1 шт |
товару немає в наявності |
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AON7611 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active |
товару немає в наявності |
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AON7611 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.5/-11.5A Power dissipation: 2.8/8.3W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 38/50mΩ Mounting: SMD Gate charge: 4.6/2nC Kind of channel: enhancement Semiconductor structure: common drain Kind of transistor: complementary pair |
товару немає в наявності |