Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > AONA66916

AONA66916 Alpha & Omega Semiconductor Inc.

Виробник: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V

на замовлення 4690 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна
1+	364.48 грн
10+	232.20 грн
100+	164.99 грн
500+	127.93 грн
1000+	119.29 грн
2000+	118.59 грн

В кошику од. на суму грн.

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Технічний опис AONA66916 Alpha & Omega Semiconductor Inc.

Description: LINEAR IC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V, Power Dissipation (Max): 7.5W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V.

Інші пропозиції AONA66916

Назва	Виробник	Інформація	Доступність	Ціна
AONA66916	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 197A; Idm: 330A Gate charge: 66nC Technology: AlphaSGT™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 330A Mounting: SMD Case: DFN5x6 Drain-source voltage: 100V Drain current: 197A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 5000 шт	товару немає в наявності	В кошику од. на суму грн.
AONA66916	Виробник : Alpha & Omega Semiconductor Inc.	Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V	товару немає в наявності	В кошику од. на суму грн.
AONA66916	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 197A; Idm: 330A Gate charge: 66nC Technology: AlphaSGT™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 330A Mounting: SMD Case: DFN5x6 Drain-source voltage: 100V Drain current: 197A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: reel; tape	товару немає в наявності	В кошику од. на суму грн.