AONH36328 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18A; Idm: 40A; 9.2W; DFN3x3A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 40A
Power dissipation: 9.2W
Case: DFN3x3A
Gate-source voltage: 16V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18A; Idm: 40A; 9.2W; DFN3x3A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 40A
Power dissipation: 9.2W
Case: DFN3x3A
Gate-source voltage: 16V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Semiconductor structure: asymmetric
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Технічний опис AONH36328 ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 18A; Idm: 40A; 9.2W; DFN3x3A, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 18A, Pulsed drain current: 40A, Power dissipation: 9.2W, Case: DFN3x3A, Gate-source voltage: 16V, On-state resistance: 11.5mΩ, Mounting: SMD, Gate charge: 11nC, Kind of channel: enhancement, Semiconductor structure: asymmetric.