AONL32328 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Supplier Device Package: 12-DFN-EP (4x3)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.64 грн |
| 10+ | 57.64 грн |
| 100+ | 38.09 грн |
| 500+ | 27.87 грн |
| 1000+ | 25.33 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
4 шт
Відгуки про товар
Написати відгук
Технічний опис AONL32328 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N/2P-CH 30V 8A 12DFN, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.6W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA, Supplier Device Package: 12-DFN-EP (4x3).
Інші пропозиції AONL32328
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| AONL32328 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N/2P-CH 30V 8A 12DFN Packaging: Tape & Reel (TR) Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA Supplier Device Package: 12-DFN-EP (4x3) |
товару немає в наявності |
В кошику од. на суму грн. |
| AONL32328 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Supplier Device Package: 12-DFN-EP (4x3)
Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Supplier Device Package: 12-DFN-EP (4x3)
товару немає в наявності
В кошику
од. на суму грн.