AONP36336 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 50A 8DFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис AONP36336 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 50A 8DFN, Supplier Device Package: 8-DFN-EP (3.3x3.3), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції AONP36336 за ціною від 33.77 грн до 122.71 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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AONP36336 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 50A 8DFN Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-DFN-EP (3.3x3.3) Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount |
на замовлення 14084 шт: термін постачання 21-31 дні (днів) |
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| AONP36336 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 50A 8DFN
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Description: MOSFET 2N-CH 30V 50A 8DFN
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
на замовлення 14084 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.71 грн |
| 10+ | 74.86 грн |
| 100+ | 50.02 грн |
| 500+ | 36.98 грн |
| 1000+ | 33.77 грн |