Технічний опис AONR36326C Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 12A/12A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 9.8mOhm @ 12A, 10V, Power Dissipation (Max): 3.1W (Ta), 20.5W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V.
Інші пропозиції AONR36326C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AONR36326C | Виробник : Alpha & Omega Semiconductor |
 N-Channel MOSFET |
товару немає в наявності |
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| AONR36326C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 48A; 8W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Kind of package: reel; tape Power dissipation: 8W Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A On-state resistance: 9.8mΩ Drain current: 12A Drain-source voltage: 30V кількість в упаковці: 1 шт |
товару немає в наявності |
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AONR36326C | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 12A/12A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta), 20.5W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V |
товару немає в наявності |
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| AONR36326C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 48A; 8W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Kind of package: reel; tape Power dissipation: 8W Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A On-state resistance: 9.8mΩ Drain current: 12A Drain-source voltage: 30V |
товару немає в наявності |